NickelMaghrebV1, Main, Exploration, bibRecord, 000E19

Point defects in Ni2Si : 63Ni diffusion and differential scanning calorimetry study of quenched-in vacancies

Identifieur interne : 000E19 ( Main/Exploration ); précédent : 000E18; suivant : 000E20

Point defects in Ni2Si : 63Ni diffusion and differential scanning calorimetry study of quenched-in vacancies

Auteurs : A. Jennane [Maroc, France] ; E. H. Sayouty [Maroc] ; J. Bernardini [France] ; G. Moya [France]

Source :

Philosophical magazine letters [ 0950-0839 ] ; 1997.

RBID : Pascal:97-0402839

Descripteurs français

Pascal (Inist)
- Défaut ponctuel, Diffusion(transport), Autodiffusion, DSC, Recuit, Trempe, Dépendance température, Energie activation, Amas lacune, Lacune, Equation Arrhenius, Traceur radioactif, Alliage base nickel, Silicium alliage, Etude expérimentale, 6630F, 6172J.

English descriptors

KwdEn :
- Activation energy, Annealing, Arrhenius equation, DSC, Diffusion, Experimental study, Nickel base alloys, Point defects, Quenching, Radioactive tracers, Self-diffusion, Silicon alloys, Temperature dependence, Vacancies, Vacancy cluster.

Abstract

No curvature is observed in the Arrhenius plot for nickel volume diffusion coefficients measured up to T=0.94T_m in Ni2Si using ⁶³Ni as a tracer. Differential scanning calorimetry performed on the same samples, quenched from 820 and 1015°C, reveals two annealing stages, in good agreement with a previous positron annihilation study. The activation energy and the order of the reaction for each stage have been determined. At low temperatures, the activation energy of the stage centred at about 180°C (1.1 ± 0.leV) is integrated as the nickel monovacancy migration energy. It is assumed that the second stage, centred at about 380°C, corresponds to the break-up of vacancy clusters; its activation energy (2.6 ± 0.leV) is in agreement with that measured for nickel bulk diffusion (2.42 ± 0.04 eV).

Affiliations:

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Le document en format XML

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Si : <sup>63</sup>
Ni diffusion and differential scanning calorimetry study of quenched-in vacancies</title>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Point defects in Ni<sub>2</sub>
Si : <sup>63</sup>
Ni diffusion and differential scanning calorimetry study of quenched-in vacancies</title>
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<series><title level="j" type="main">Philosophical magazine letters</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term>
<term>Annealing</term>
<term>Arrhenius equation</term>
<term>DSC</term>
<term>Diffusion</term>
<term>Experimental study</term>
<term>Nickel base alloys</term>
<term>Point defects</term>
<term>Quenching</term>
<term>Radioactive tracers</term>
<term>Self-diffusion</term>
<term>Silicon alloys</term>
<term>Temperature dependence</term>
<term>Vacancies</term>
<term>Vacancy cluster</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Défaut ponctuel</term>
<term>Diffusion(transport)</term>
<term>Autodiffusion</term>
<term>DSC</term>
<term>Recuit</term>
<term>Trempe</term>
<term>Dépendance température</term>
<term>Energie activation</term>
<term>Amas lacune</term>
<term>Lacune</term>
<term>Equation Arrhenius</term>
<term>Traceur radioactif</term>
<term>Alliage base nickel</term>
<term>Silicium alliage</term>
<term>Etude expérimentale</term>
<term>6630F</term>
<term>6172J</term>
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<front><div type="abstract" xml:lang="en">No curvature is observed in the Arrhenius plot for nickel volume diffusion coefficients measured up to T=0.94T<sub>m</sub>
 in Ni2Si using <sup>63</sup>
Ni as a tracer. Differential scanning calorimetry performed on the same samples, quenched from 820 and 1015°C, reveals two annealing stages, in good agreement with a previous positron annihilation study. The activation energy and the order of the reaction for each stage have been determined. At low temperatures, the activation energy of the stage centred at about 180°C (1.1 ± 0.leV) is integrated as the nickel monovacancy migration energy. It is assumed that the second stage, centred at about 380°C, corresponds to the break-up of vacancy clusters; its activation energy (2.6 ± 0.leV) is in agreement with that measured for nickel bulk diffusion (2.42 ± 0.04 eV).</div>
</front>
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Point defects in Ni2Si : 63Ni diffusion and differential scanning calorimetry study of quenched-in vacancies

Point defects in Ni2Si : 63Ni diffusion and differential scanning calorimetry study of quenched-in vacancies

Source :

Descripteurs français

English descriptors

Abstract

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